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Total 113
No. Contents Date
49
Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices, J. B. Park, W. S. Lim, B. J. Park, I. H. Park, Y. W. Kim, and G. Y. Yeom,  J Phys D Appl Phys 42 (5) (2009).
01-21
50
Large-Scale Soft Colloidal Template Synthesis of 1.4 nm Thick CdSe Nanosheets, J. S. Son, X. D. Wen, J. Joo, J. Chae, S. I. Baek, K. Park, J. H. Kim, K. An, J. H. Yu, S. G. Kwon, S. H. Choi, Z. W. Wang, Y. W. Kim, Y. Kuk, R. Hoffmann, and T. Hyeon,  Angew Chem Int Edit 48 (37), 6861 (2009).
01-21
51
Synthesis of Uniform Hollow Oxide Nanoparticles through Nanoscale Acid Etching, K. An, S. G. Kwon, M. Park, H. Bin Na, S. I. Baik, J. H. Yu, D. Kim, J. S. Son, Y. W. Kim, I. C. Song, W. K. Moon, H. M. Park, and T. Hyeon,  Nano Lett 8 (12), 4252 (2008).
01-20
52
Defect structure induced by ion injection in WC-CoS. I. Baik, E. G. Choi, J. H. Jun, and Y. W. Kim,  Scripta Mater 58 (7), 614 (2008).
01-20
53
Analysis of interface layers by spectroscopic ellipsometry, T. J. Kim, J. J. Yoon, Y. D. Kim, D. E. Aspnes, M. V. Klein, D. S. Ko, Y. W. Kim, V. C. Elarde, and J. J. Coleman,  Appl Surf Sci 255 (3), 640 (2008).
01-20
54
A two-step-recess process based on atomic-layer etching for high-performance In0.52Al0.48As/In0-53Ga0.47As p-HEMTs, T. W. Kim, D. H. Kim, S. D. Park, S. H. Shin, S. J. Jo, H. J. Song, Y. M. Park, J. O. Bae, Y. W. Kim, G. Y. Yeom, J. H. Jang, and J. I. Song,  Ieee T Electron Dev 55 (7), 1577 (2008).
01-20
55
Effect of initial crystallized silicon layer on the properties of microcrystalline silicon grown by internal inductively coupled plasma-type plasma enhanced chemical vapor deposition, H. C. Lee, H. B. Kim, G. Y. Yeom, I. H. Park, and Y. W. Kim,  Surf Coat Tech 203 (5-7), 799 (2008).
01-20
56
Dew-point controlled oxidataion of Fe-C-Mn-Al-Si-Cu transfarmation-induced plasticity-aided steelsX. S. Li, S. I. Baek, C. S. Oh, S. J. Kim, and Y. W. Kim,  Scripta Mater 59 (3), 290 (2008).
01-20
57
Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure, C. H. Jang, S. I. Paik, Y. W. Kim, and N. E. Lee,  Appl Phys Lett 90 (9) (2007).
01-20
58
Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry, T. J. Kim, T. H. Ghong, Y. D. Kim, D. E. Aspnes, M. V. Klein, D. S. Ko, Y. W. Kim, V. C. Elarde, and J. J. Coleman,  J Appl Phys 102 (6) (2007).
01-20
59
Effective removal of Ga residue from focused ion beam using a plasma cleanerD. S. Ko, Y. M. Park, S. D. Kim, and Y. W. Kim,  Ultramicroscopy 107 (4-5), 368 (2007).
01-20
60
Observation of oxide precipitates in InN nanostructures, S. Y. Kwon, Z. Ren, Q. Sun, J. Han, Y. W. Kim, E. Yoon, B. H. Kong, H. K. Cho, I. J. Kim, and H. Cheong,  Appl Phys Lett 91 (23) (2007).
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In-situ Electron Microscopy Laboratory
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