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Total 113
No. Contents Date
37
Effects of high-temperature postannealing on magnetic properties of Co-doped anatase TiO2 thin films, D. H. Kim, J. S. Yang, Y. S. Kim, T. W. Noh, S. D. Bu, S. I. Baik, Y. W. Kim, Y. D. Park, S. J. Pearton, J. Y. Kim, J. H. Park, H. J. Lin, C. T. Chen, and Y. J. Song,  Phys Rev B 71 (1) (2005).
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38
Cobalt inhomogeneity in rutile Ti0.93Co0.07O2 thin films and its relation to room-temperature ferromagnetism, D. H. Kim, K. W. Lee, J. S. Yang, T. W. Noh, S. D. Bu, Y. W. Kim, and R. Jung,  J Korean Phys Soc 46 (2), 503 (2005).
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39
Magnetic properties of YIG (Y3Fe5O12) thin films prepared by the post annealing of amorphous films deposited by rf-magnetron sputtering, Y. M. Kang, S. H. Wee, S. Baik, S. G. Min, S. C. Yu, S. H. Moon, Y. W. Kim, and S. I. Yoo,  J Appl Phys 97 (10) (2005).
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40
Near field photoluminescence investigation of surface defects in InGaN/GaN quantum wells, M. S. Jeong, D. K. Ko, J. Lee, H. J. Kim, J. Kim, Y. W. Kim, E. K. Suh, and J. O. White,  J Korean Phys Soc 47, S209 (2005).
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41
Si-based magnetic tunnel transistor with single CoFe base layer, S. H. Jang, Y. W. Kim, J. H. Lee, and K. Y. Kim,  J Appl Phys 98 (9) (2005).
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42
Formation of nickel silicide layer on strained-Si0.83Ge0.17/Si(001) using a sacrificial Si layer and its morphological instability, C. H. Jang, D. O. Shin, S. I. Baik, Y. W. Kim, Y. J. Song, K. H. Shim, and N. E. Lee,  Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 (7A), 4805 (2005).
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43
Annealing-temperature effect on various cutoff-voltage electrochemical performances in AlPO4-Nanoparticle-Coated LiCoO2, J. P. Cho, B. Kim, J. G. Lee, Y. W. Kim, and B. Park,  J Electrochem Soc 152 (1), A32 (2005).
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44
Comparison of Al2O3- and AlPO4-coated LiCoO2 cathode materials for a Li-ion cell, J. Cho, T. G. Kim, C. Kim, J. G. Lee, Y. W. Kim, and B. Park,  J Power Sources 146 (1-2), 58 (2005).
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45
Epitaxial stabilization of a new multiferroic hexagonal phase of TbMnO3 thin films, J. H. Lee, P. Murugavel, H. Ryu, D. Lee, J. Y. Jo, J. W. Kim, H. J. Kim, K. H. Kim, Y. Jo, M. H. Jung, Y. H. Oh, Y. W. Kim, J. G. Yoon, J. S. Chung, and T. W. Noh,  Adv Mater 18 (23), 3125 (2006).
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46
In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition, S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park,  J Appl Phys 99 (4) (2006).
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47
Strong near-ultraviolet and blue emissions at room temperature from two-step grown In-rich InGaN/GaN multiple quantum wells, S. Y. Kwon, S. I. Baik, H. J. Kim, P. Moon, Y. W. Kim, J. W. Yoon, H. Cheong, Y. S. Park, and E. Yoon,  Micro Nano Lett 1 (1), 53 (2006).
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48
Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive layers, Y. S. Kim, J. Y. Jo, D. J. Kim, Y. J. Chang, J. H. Lee, T. W. Noh, T. K. Song, J. G. Yoon, J. S. Chung, S. I. Baik, Y. W. Kim, and C. U. Jung,  Appl Phys Lett 88 (7) (2006).
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