HOME > Publications
Total 113
No. Contents Date
49
Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS, K. S. Kim, T. Kim, Y. J. Park, S. I. Baek, Y. W. Kim, H. D. Sun, and M. D. Dawson,  J Cryst Growth 287 (2), 620 (2006).
01-20
50
Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers, K. S. Kim, T. Kim, Y. J. Park, S. I. Baek, and Y. W. Kim,  J Appl Phys 100 (4) (2006).
01-20
51
Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry, T. H. Ghong, Y. D. Kim, D. E. Aspnes, M. V. Klein, D. S. Ko, Y. W. Kim, V. Elarde, and J. Coleman,  J Korean Phys Soc 48 (6), 1601 (2006).
01-20
52
Measurement and estimation of temperature rise in TEM sample during ion milling, Y. M. Park, D. S. Ko, K. W. Yi, I. Petrov, and Y. W. Kim,  Ultramicroscopy 107 (8), 663 (2007).
01-20
53
Oxide formation of transformation-induced plasticity-aided steel during dew-point controlX. S. Li, S. I. Baek, C. S. Oh, S. J. Kim, and Y. W. Kim,  Scripta Mater 57 (2), 113 (2007).
01-20
54
Observation of oxide precipitates in InN nanostructures, S. Y. Kwon, Z. Ren, Q. Sun, J. Han, Y. W. Kim, E. Yoon, B. H. Kong, H. K. Cho, I. J. Kim, and H. Cheong,  Appl Phys Lett 91 (23) (2007).
01-20
55
Effective removal of Ga residue from focused ion beam using a plasma cleanerD. S. Ko, Y. M. Park, S. D. Kim, and Y. W. Kim,  Ultramicroscopy 107 (4-5), 368 (2007).
01-20
56
Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry, T. J. Kim, T. H. Ghong, Y. D. Kim, D. E. Aspnes, M. V. Klein, D. S. Ko, Y. W. Kim, V. C. Elarde, and J. J. Coleman,  J Appl Phys 102 (6) (2007).
01-20
57
Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure, C. H. Jang, S. I. Paik, Y. W. Kim, and N. E. Lee,  Appl Phys Lett 90 (9) (2007).
01-20
58
Dew-point controlled oxidataion of Fe-C-Mn-Al-Si-Cu transfarmation-induced plasticity-aided steelsX. S. Li, S. I. Baek, C. S. Oh, S. J. Kim, and Y. W. Kim,  Scripta Mater 59 (3), 290 (2008).
01-20
59
Effect of initial crystallized silicon layer on the properties of microcrystalline silicon grown by internal inductively coupled plasma-type plasma enhanced chemical vapor deposition, H. C. Lee, H. B. Kim, G. Y. Yeom, I. H. Park, and Y. W. Kim,  Surf Coat Tech 203 (5-7), 799 (2008).
01-20
60
A two-step-recess process based on atomic-layer etching for high-performance In0.52Al0.48As/In0-53Ga0.47As p-HEMTs, T. W. Kim, D. H. Kim, S. D. Park, S. H. Shin, S. J. Jo, H. J. Song, Y. M. Park, J. O. Bae, Y. W. Kim, G. Y. Yeom, J. H. Jang, and J. I. Song,  Ieee T Electron Dev 55 (7), 1577 (2008).
01-20
 1  2  3  4  5  6  7  8  9  10  
¼­¿ï½Ã °ü¾Ç±¸ °ü¾Ç·Î1 ¼­¿ï´ëÇб³ 31µ¿ 411È£
½Ç½Ã°£°üÂûÀüÀÚÇö¹Ì°æ ¿¬±¸½Ç
Tel : 02-878-5010  |  Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED  
In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
Äü¸Þ´º