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Total 113
No. Contents Date
61
Oxide formation of transformation-induced plasticity-aided steel during dew-point controlX. S. Li, S. I. Baek, C. S. Oh, S. J. Kim, and Y. W. Kim,  Scripta Mater 57 (2), 113 (2007).
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62
Measurement and estimation of temperature rise in TEM sample during ion milling, Y. M. Park, D. S. Ko, K. W. Yi, I. Petrov, and Y. W. Kim,  Ultramicroscopy 107 (8), 663 (2007).
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63
Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry, T. H. Ghong, Y. D. Kim, D. E. Aspnes, M. V. Klein, D. S. Ko, Y. W. Kim, V. Elarde, and J. Coleman,  J Korean Phys Soc 48 (6), 1601 (2006).
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64
Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers, K. S. Kim, T. Kim, Y. J. Park, S. I. Baek, and Y. W. Kim,  J Appl Phys 100 (4) (2006).
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65
Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS, K. S. Kim, T. Kim, Y. J. Park, S. I. Baek, Y. W. Kim, H. D. Sun, and M. D. Dawson,  J Cryst Growth 287 (2), 620 (2006).
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66
Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive layers, Y. S. Kim, J. Y. Jo, D. J. Kim, Y. J. Chang, J. H. Lee, T. W. Noh, T. K. Song, J. G. Yoon, J. S. Chung, S. I. Baik, Y. W. Kim, and C. U. Jung,  Appl Phys Lett 88 (7) (2006).
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67
Strong near-ultraviolet and blue emissions at room temperature from two-step grown In-rich InGaN/GaN multiple quantum wells, S. Y. Kwon, S. I. Baik, H. J. Kim, P. Moon, Y. W. Kim, J. W. Yoon, H. Cheong, Y. S. Park, and E. Yoon,  Micro Nano Lett 1 (1), 53 (2006).
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68
In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition, S. Y. Kwon, H. J. Kim, H. Na, Y. W. Kim, H. C. Seo, H. J. Kim, Y. Shin, E. Yoon, and Y. S. Park,  J Appl Phys 99 (4) (2006).
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69
Epitaxial stabilization of a new multiferroic hexagonal phase of TbMnO3 thin films, J. H. Lee, P. Murugavel, H. Ryu, D. Lee, J. Y. Jo, J. W. Kim, H. J. Kim, K. H. Kim, Y. Jo, M. H. Jung, Y. H. Oh, Y. W. Kim, J. G. Yoon, J. S. Chung, and T. W. Noh,  Adv Mater 18 (23), 3125 (2006).
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70
Comparison of Al2O3- and AlPO4-coated LiCoO2 cathode materials for a Li-ion cell, J. Cho, T. G. Kim, C. Kim, J. G. Lee, Y. W. Kim, and B. Park,  J Power Sources 146 (1-2), 58 (2005).
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71
Annealing-temperature effect on various cutoff-voltage electrochemical performances in AlPO4-Nanoparticle-Coated LiCoO2, J. P. Cho, B. Kim, J. G. Lee, Y. W. Kim, and B. Park,  J Electrochem Soc 152 (1), A32 (2005).
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72
Formation of nickel silicide layer on strained-Si0.83Ge0.17/Si(001) using a sacrificial Si layer and its morphological instability, C. H. Jang, D. O. Shin, S. I. Baik, Y. W. Kim, Y. J. Song, K. H. Shim, and N. E. Lee,  Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 (7A), 4805 (2005).
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In-situ Electron Microscopy Laboratory
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Seoul National University
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