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작성일 : 15-02-02 20:18
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2013
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글쓴이 :
Master
 조회 : 1,734
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Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence, C. Yang, S. Lee, K. W. Shin, S. Oh, D. Moon, S. D. Kim, Y. W. Kim, C. Z. Kim, W. K. Park, W. J. Choi, J. Park, and E. Yoon, J Cryst Growth 370, 168 (2013).
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서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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