HOME > Research > In-situ Electron microscopy
Total. 6
No. Content
1
in-situ observation of electrically-active device operation using electrical probing TEM holder
  • A study on operation and failure mechanism of electronic device
  • Measurement of electrical properties of individual nano-size semiconductor materials (nanowire, nanorod, etc.)
 
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2
in-situ observation of mechanical behaviors using linear actuated TEM holder
  • A study on the defect generation and multiplication
  • Dynamic strengthening (TRIP, TWIP) observation during tensile experiment
  • Failure mechanism observation
 
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3
in-situ observation of nano-particle nucleation process using liquid-cell TEM holder
  • Observation of the nano-particle nucleation process in solution
  • Investigation of the nano-particle formation mechanism
 
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4
in-situ observation of annealing process using hot stage TEM holder
  • Observation of the multi-layer inter-diffusion during annealing
  • Investigation of the intermetallic phase formation mechanism
 
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5
in-situ observation of annealing process using hot stage TEM holder
  • Observation of the grain boundary behavior and the grain growth during heating
  • Investigation of the grain coalescing mechanism
 
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6
in-situ observation of copper atom behavior using current injection TEM holder

  • A study on the copper atom migration and hillock formation
  • Failure mechanism observation of copper line in electrical device
 
migration.jpg

 
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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
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