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작성일 : 15-01-20 18:03
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2005
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글쓴이 :
Master
 조회 : 1,967
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Near field photoluminescence investigation of surface defects in InGaN/GaN quantum wells, M. S. Jeong, D. K. Ko, J. Lee, H. J. Kim, J. Kim, Y. W. Kim, E. K. Suh, and J. O. White, J Korean Phys Soc 47, S209 (2005).
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서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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