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작성일 : 15-09-30 13:27
2015
 글쓴이 : Master
조회 : 1,373  
Interface characteristics of spin-on-dielectric SiOx-buffered passivation 
layers for AlGaN/GaN high electron mobility transistors
.,
 P. S. KoK. S. ParkY. C. Yoon, 
M. H. Sheen, and S. D. Kim, Thin Solid Films , 589, 838-843.(2015)

 
   
 

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