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ÀÛ¼ºÀÏ : 15-09-30 13:27
2015
 ±Û¾´ÀÌ : Master
Á¶È¸ : 2,142  
Interface characteristics of spin-on-dielectric SiOx-buffered passivation 
layers for AlGaN/GaN high electron mobility transistors
.,
 P. S. KoK. S. ParkY. C. Yoon, 
M. H. Sheen, and S. D. Kim, Thin Solid Films , 589, 838-843.(2015)

 
   
 

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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
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