ÀÛ¼ºÀÏ : 15-12-31 16:57
2015
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±Û¾´ÀÌ :
Master
Á¶È¸ : 2,466
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The impact of atomic layer deposited SiO2 passivation for high-k Ta1-xZrxO on the InP substrate., C. Mahata, I. K. Oh, C. M. Yoon, C. W. Lee, J. m. Seo, H. Algadi, M. H. Sheen, Y. W. Kim, H. j. Kim and T. Y. Lee, Journal of Materials Chemistry C, 39 (3), 10293-10301.(2015)
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In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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