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작성일 : 15-01-20 18:03
2005
 글쓴이 : Master
조회 : 1,127  
Near field photoluminescence investigation of surface defects in InGaN/GaN quantum wells, M. S. Jeong, D. K. Ko, J. Lee, H. J. Kim, J. Kim, Y. W. Kim, E. K. Suh, and J. O. White,  J Korean Phys Soc 47, S209 (2005).

 
   
 

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In-situ Electron Microscopy Laboratory
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