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ÀÛ¼ºÀÏ : 15-01-20 18:03
2005
 ±Û¾´ÀÌ : Master
Á¶È¸ : 1,580  
Near field photoluminescence investigation of surface defects in InGaN/GaN quantum wells, M. S. Jeong, D. K. Ko, J. Lee, H. J. Kim, J. Kim, Y. W. Kim, E. K. Suh, and J. O. White,  J Korean Phys Soc 47, S209 (2005).

 
   
 

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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
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