ÀÛ¼ºÀÏ : 15-01-20 18:04
2005
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±Û¾´ÀÌ :
Master
Á¶È¸ : 1,899
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Formation of nickel silicide layer on strained-Si0.83Ge0.17/Si(001) using a sacrificial Si layer and its morphological instability, C. H. Jang, D. O. Shin, S. I. Baik, Y. W. Kim, Y. J. Song, K. H. Shim, and N. E. Lee, Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 (7A), 4805 (2005).
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In-situ Electron Microscopy Laboratory 31-411 Dept. of Materials Science and Engineering Seoul National University Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea |
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