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A Study on diffusion barrier materials and electromigration of Cu
 작성자 : Master
Date : 2014-10-28 19:04  |  Hit : 758  
  • There are many materials which have been studied and developed for being a diffusion barrier against Cu, for example, nitrides of transition metals such as TaN, TiN, TiB2, and so on.
  • Electromigration is a major reliability concern in intergrated circuits due to the aggressive scaling of interconnect dimensions and the increasing current densities at operation.
 
pvd.gif

 PVD system for the metal-film growing

 
   
 

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In-situ Electron Microscopy Laboratory
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