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Total 113
No. Contents Date
13
Two-dimensional assemblies of ultrathin titanate nanosheets for lithium ion battery anodes, S. H. Yu, M. Park, H. S. Kim, A. Jin, M. Shokouhimehr, T. Y. Ahn, Y. W. Kim, T. Hyeon, and Y. E. Sung,  RSC Adv. 4 (24), 12087 (2014).
02-02
14
Aging behavior and delamination in cold drawn and post-deformation annealed hyper-eutectoid steel wires, S. W. Joung, U. G. Kang, S. P. Hong, Y. W. Kim, and W. J. Nam,  Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process. 586, 171 (2013).
02-02
15
Selectively grown vertical silicon nanowire p-n(+) photodiodes via aqueous electroless etching, H. Lee, J. Hong, S. Lee, S. D. Kim, Y. W. Kim, and T. Lee,  Appl Surf Sci 274, 79 (2013).
02-02
16
Synthesis of Few-Layered Graphene Nanoballs with Copper Cores Using Solid Carbon Source, S. Lee, J. Hong, J. H. Koo, H. Lee, S. Lee, T. Choi, H. Jung, B. Koo, J. Park, H. Kim, Y. W. Kim, and T. Lee,  Acs Appl Mater Inter 5 (7), 2432 (2013).
02-02
17
Formation of Vertically Aligned Cobalt Silicide Nanowire Arrays Through a Solid-State Reaction, S. Lee, J. Yoon, B. Koo, D. H. Shin, J. H. Koo, C. J. Lee, Y. W. Kim, H. Kim, and T. Lee,  Ieee T Nanotechnol 12 (5), 704 (2013).
02-02
18
Self-assembled Fe3O4 nanoparticle clusters as high-performance anodes for lithium ion batteries via geometric confinement, S. H. Lee, S. H. Yu, J. E. Lee, A. Jin, D. J. Lee, N. Lee, H. Jo, K. Shin, T. Y. Ahn, Y. W. Kim, H. Choe, Y. E. Sung, and T. Hyeon,  Nano Lett 13 (9), 4249 (2013).
02-02
19
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric, K. S. Min, C. Park, C. Y. Kang, C. S. Park, B. J. Park, Y. W. Kim, B. H. Lee, J. C. Lee, G. Bersuker, P. Kirsch, R. Jammy, and G. Y. Yeom,  Solid State Electron 82, 82 (2013).
02-02
20
Reversible wettability control of silicon nanowire surfaces: From superhydrophilicity to superhydrophobicity, J. Seo, S. Lee, H. Han, Y. Chung, J. Lee, S. D. Kim, Y. W. Kim, S. Lim, and T. Lee,  Thin Solid Films 527, 179 (2013).
02-02
21
Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence, C. Yang, S. Lee, K. W. Shin, S. Oh, D. Moon, S. D. Kim, Y. W. Kim, C. Z. Kim, W. K. Park, W. J. Choi, J. Park, and E. Yoon,  J Cryst Growth 370, 168 (2013).
02-02
22
Copper-indium-selenide quantum dot-sensitized solar cells, J. Yang, J. Y. Kim, J. H. Yu, T. Y. Ahn, H. Lee, T. S. Choi, Y. W. Kim, J. Joo, M. J. Ko, and T. Hyeon,  Physical Chemistry Chemical Physics 15 (47), 20517 (2013).
02-02
23
GaN light-emitting diodes on glass substrates with enhanced electroluminescence, J. H. Choi, H. Y. Ahn, Y. S. Lee, K. Park, T. H. Kim, K. S. Cho, C. W. Baik, S. I. Kim, H. Yoo, E. H. Lee, B. L. Choi, S. D. Kim, Y. W. Kim, M. Kim, and S. Hwang,  J. Mater. Chem. 22 (43), 22942 (2012).
02-02
24
One-step graphene coating of heteroepitaxial GaN films, J. K. Choi, J. H. Huh, S. D. Kim, D. Moon, D. Yoon, K. Joo, J. Kwak, J. H. Chu, S. Y. Kim, K. Park, Y. W. Kim, E. Yoon, H. Cheong, and S. Y. Kwon,  Nanotechnology 23 (43) (2012).
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In-situ Electron Microscopy Laboratory
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