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ÀÛ¼ºÀÏ : 15-02-02 20:18
2013
 ±Û¾´ÀÌ : Master
Á¶È¸ : 1,445  
Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence, C. Yang, S. Lee, K. W. Shin, S. Oh, D. Moon, S. D. Kim, Y. W. Kim, C. Z. Kim, W. K. Park, W. J. Choi, J. Park, and E. Yoon,  J Cryst Growth 370, 168 (2013).

 
   
 

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In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
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