HOME > Publications
 
작성일 : 15-02-02 20:18
2013
 글쓴이 : Master
조회 : 1,023  
Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence, C. Yang, S. Lee, K. W. Shin, S. Oh, D. Moon, S. D. Kim, Y. W. Kim, C. Z. Kim, W. K. Park, W. J. Choi, J. Park, and E. Yoon,  J Cryst Growth 370, 168 (2013).

 
   
 

서울시 관악구 관악로1 서울대학교 31동 411호
실시간관찰전자현미경 연구실
Tel : 02-878-5010  |  Fax : 02-878-5010
COPYRIGHT 2014. ALL RIGHT RESERVED  
In-situ Electron Microscopy Laboratory
31-411 Dept. of Materials Science and Engineering
Seoul National University
Gwanak-ro1 Gwanak-gu Seoul, Republic of Korea
퀵메뉴