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작성일 : 15-01-20 18:18
2007
 글쓴이 : Master
조회 : 1,131  
Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure, C. H. Jang, S. I. Paik, Y. W. Kim, and N. E. Lee,  Appl Phys Lett 90 (9) (2007).

 
   
 

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In-situ Electron Microscopy Laboratory
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Seoul National University
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