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작성일 : 15-01-20 18:20
2008
 글쓴이 : Master
조회 : 1,119  
A two-step-recess process based on atomic-layer etching for high-performance In0.52Al0.48As/In0-53Ga0.47As p-HEMTs, T. W. Kim, D. H. Kim, S. D. Park, S. H. Shin, S. J. Jo, H. J. Song, Y. M. Park, J. O. Bae, Y. W. Kim, G. Y. Yeom, J. H. Jang, and J. I. Song,  Ieee T Electron Dev 55 (7), 1577 (2008).

 
   
 

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In-situ Electron Microscopy Laboratory
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Seoul National University
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