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작성일 : 15-01-21 20:37
2009
 글쓴이 : Master
조회 : 1,134  
Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices, J. B. Park, W. S. Lim, B. J. Park, I. H. Park, Y. W. Kim, and G. Y. Yeom,  J Phys D Appl Phys 42 (5) (2009).

 
   
 

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